PART |
Description |
Maker |
HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3) 256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life 256Mbit (64Mx4) DDR266A (2-3-3) ?的256Mbit4Mx4)DDR266A-3-3)?
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Infineon Technologies AG
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K4N56163QF-GC25 K4N56163QF-GC30 K4N56163QF-GC37 |
256Mbit gDDR2 SDRAM
|
Samsung Electronic
|
M58LR128GU M58LR256GL |
128 and 256Mbit 1.8V supply Flash memories
|
STMicroelectronics
|
HY27SS08561M HY27US16561M |
(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
Hynix Semiconductor
|
K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
5962H3829435BNC 5962H3829435BNX 5962H3829435BXA 59 |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish solder.
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Aeroflex Circuit Technology
|
K4N56163QF-GC37 K4N56163QF-GC30 K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM 56Mbit GDDR2 SDRAM
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SAMSUNG SEMICONDUCTOR CO. LTD. Panasonic, Corp. Samsung Semiconductor Co., Ltd.
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